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CAT28LV65
A 5 ? A 12
V CC
CE
OE
WE
A 0 ? A 4
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING
RDY/BUSY &
TOGGLE BIT
COLUMN
DECODER
8,192 x 8
E 2 PROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O 0 ? I/O 7
RDY/BUSY
Figure 1. Block Diagram
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Temperature Under Bias
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
V CC with Respect to Ground
Package Power Dissipation Capability (T A = 25 ° C)
Lead Soldering Temperature (10 secs)
Output Short Circuit Current (Note 2)
Ratings
–55 to +125
–65 to +150
–2.0 V to +V CC + 2.0 V
? 2.0 to +7.0
1.0
300
100
Units
° C
° C
V
V
W
° C
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is ? 0.5 V. During transitions, inputs may undershoot to ? 2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V CC + 0.5 V, which may overshoot to V CC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol
N END
T DR
V ZAP
I LTH (Note 4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch ? Up
Test Method
MIL ? STD ? 883, Test Method 1033
MIL ? STD ? 883, Test Method 1008
MIL ? STD ? 883, Test Method 3015
JEDEC Standard 17
Min
10 5
100
2,000
100
Max
Units
Cycles/Byte
Years
V
mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latch ? up protection is provided for stresses up to 100 mA on address and data pins from ? 1 V to V CC + 1 V.
Table 3. MODE SELECTION
Read
Mode
CE
L
WE
H
OE
L
I/O
D OUT
Power
ACTIVE
Byte Write (WE Controlled)
Byte Write (CE Controlled)
L
L
H
H
D IN
D IN
ACTIVE
ACTIVE
Standby and Write Inhibit
Read and Write Inhibit
H
X
X
H
X
H
High ? Z
High ? Z
STANDBY
ACTIVE
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